Article ID Journal Published Year Pages File Type
1867009 Physics Letters A 2012 5 Pages PDF
Abstract

We theoretically investigated the donor binding energy distribution with respect to the dopant positions in a self-assembled GaAs/AlGaAs quantum dot (QD) in the presence of a tilted electric field. It is found that there is a critical line in a doping plane, corresponding to zero Stark shift of the donor binding energy. At low electric fields, our work reveals that Stark shift of an on-center donor binding energy is a “purely” quadratic function of the electric field strength, irrespective of QD dimensions and field orientations. This scaling law permits us to indirectly estimate the impurity polarizability in a self-assembled QD.

► There is a critical line corresponding to zero shift of the donor binding energy. ► Dot dimensions and applied electric field affect significantly the critical line. ► Stark shift of on center donor binding energy is a quadratic function of the field. ► An indirect way to estimate the impurity polarizability has been reported.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Physics and Astronomy (General)
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