Valley polarized electronic transport through a line defect in graphene: An analytical approach based on tight-binding model

We develop a tight-binding theory to study the electronic transport through an extended line defect in monolayer graphene. After establishing an analytical expression of the transmission probability, we clarify the following issues concerning the valley polarization in the electronic transport process. Firstly, we find that the valley polarization is robust in the total linear dispersion region. More interestingly, we find that the lattice deformation around the line defect play an important role in tuning the incident angle for complete transmission. Finally, we indicate that next nearest neighbor interaction only causes a small suppression to the valley polarization.

► The valley polarization is robust in the total linear dispersion region. ► Lattice deformation tunes incident angle for complete transmission in low energy. ► The influence of next nearest neighbor interaction is investigated.