Enhanced deuterium diffusion in boron doped monocrystalline diamond films using bias-assisted MPCVD

The present study well emphasises the role of the bias voltage on the deuterium diffusion in boron doped diamond films ([B]=2×1019 cm−3)([B]=2×1019 cm−3). A −50 V−50 V bias voltage applied between the deuterium microwave plasma and the diamond surface is required to initiate deuterium diffusion. Increasing effective diffusion coefficients are obtained from the SIMS profiles for bias voltages up to −80 V−80 V. Then, for bias voltages higher than −120 V−120 V, the etching of diamond film becomes dominant.