Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1867385 | Physics Letters A | 2010 | 5 Pages |
Abstract
Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor quantum well are investigated. We have found that the increase of the laser-dressing parameter leads to important effects on the electronic and optical properties of a quantum well. This gives a new degree of freedom in various device applications based on the intersubband transition of electrons.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
F. Ungan, U. Yesilgul, S. Şakiroğlu, E. Kasapoglu, H. Sari, I. Sökmen,