Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
186745 | Electrochimica Acta | 2014 | 5 Pages |
Abstract
Unlike previous HF etching of Si oxides to produce porous Si a new concept for the preparation of porous SiOx was suggested adopting Si as a pore generating agent and Si oxides as template using NaOH solution. The heat treatment of pristine SiO at 900 °C provided nano-crystalline Si within the SiOx matrix. The nano-crystalline Si was dissolved to provide pore size of 200∼500 nm, while most of the SiOx matrix remained as a template during NaOH etching. The surface area of the etched SiO was increased more than 5 times compared with not-etched SiO. The porous SiOx anode exhibited a stable reversible capacity of about 1240 mAh g−1 over 100 cycles at 0.2 C.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Byeong-Chul Yu, Yoon Hwa, Jae-Hun Kim, Hun-Joon Sohn,