Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1867990 | Physics Letters A | 2007 | 7 Pages |
Abstract
Theoretical study of the chemical shift and ground level splitting in spherical silicon quantum dot with a shallow donor has been carried out within the framework of the k-p method. We have found the great value of the chemical shift compared to the one in bulk. It is shown that the level splitting strongly depends on the dot radius and the donor position inside the nanocrystal.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Vladimir A. Belyakov, Vladimir A. Burdov,