| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1868386 | Physics Letters A | 2006 | 7 Pages |
Abstract
We performed density functional calculations on the electronic properties of zincblende ZnS with various impurities and defects involved. Our extensive calculations do not provide straightforward support for Te isoelectronic center being the origin for the high photoluminescence observed in the ZnS:Te system, while Te anti-site may be a possibility.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
H.J. Liu, C.T. Chan,