Structural Optical and Electrical Transport Properties of ALD-Fabricated CuCrO2 Films

We report the structural, optical and electrical transport properties of CuCrO2 films deposited by atomic layer deposition. Copper tetramethyl heptanedionate (Cu(thd)2) and chromium acetyl acetonate (Cr(acac)3) have been used as the precursors for copper and chromium whereas ozone as the oxygen source. The effect of post-deposition annealing on the crystallinity of the films, band gap as well as electrical transport properties has been investigated. A direct band-gap of 3.10 eV was estimated from the UV visible spectrophotometric measurements for the films annealed at 800 0C in Ar environment. Electrical resistivity measurements show a semiconducting behavior. Seebeck coefficient shows an increasing trend with annealing temperature and with temperature sweep measurements.