Effects of Holmium Doping on the Critical Current Density in GdBa2Cu3Oy Films Fabricated by Metal-organic Deposition Using Fluorine-free Solutions

The effects of holmium (Ho) doping on the fabrication and superconducting properties of GdBa2Cu3Oy (GdBCO) films fabricated by metal-organic deposition using 2-ethylhexanate solutions were investigated. Ho doping up to a doping level of 7.5 mol% did not affect the crystal growth and critical transition temperatures of the GdBCO films. The Ho-doped GdBCO films showed improved critical density (Jc) compared to the pure film. For 5-mol%-Ho-doped GdBCO films, the Jc at the self-magnetic field and the α value were 1.51 MA/cm2 and 0.65, respectively, while those of the pure films were 0.85 MA/cm2 and 0.69, respectively.