Article ID Journal Published Year Pages File Type
1869213 Physics Procedia 2013 9 Pages PDF
Abstract

Graphene oxide (GO) is prepared by the conventional Hummer's method and subsequently coated with polymaleic anhydride-alt-1-octadecene polymer (P-GO). Both GO and P-GO thin films are deposited on silicon substrate by drop- casting followed by air drying. Raman Spectroscopy, voltage - current (I-V) and polarization - electric field (P-E) measurements are used to study the micro-structural, electrical and ferroelectric behaviors of GO and P-GO thin films. The voltage - current (I-V) measurement shows that the synthesized GO and P-GO behaves like semiconducting and conducting materials respectively and are consistence with the results obtained from Raman spectroscopy measurement. The polarization - electric field (P-E) measurements shows that the polarization behavior is similar to lossy capacitor response with the combined effects of capacitor and resistor.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Physics and Astronomy (General)