Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1869213 | Physics Procedia | 2013 | 9 Pages |
Graphene oxide (GO) is prepared by the conventional Hummer's method and subsequently coated with polymaleic anhydride-alt-1-octadecene polymer (P-GO). Both GO and P-GO thin films are deposited on silicon substrate by drop- casting followed by air drying. Raman Spectroscopy, voltage - current (I-V) and polarization - electric field (P-E) measurements are used to study the micro-structural, electrical and ferroelectric behaviors of GO and P-GO thin films. The voltage - current (I-V) measurement shows that the synthesized GO and P-GO behaves like semiconducting and conducting materials respectively and are consistence with the results obtained from Raman spectroscopy measurement. The polarization - electric field (P-E) measurements shows that the polarization behavior is similar to lossy capacitor response with the combined effects of capacitor and resistor.