| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1869673 | Physics Procedia | 2011 | 6 Pages |
Abstract
We have studied, by computer simulation, some static and vibrationnal proprieties of SiGe/Si islands. We have used a Valence Force Field combined to Monte Carlo technique to study the growth of Ge and SiGe on (001)Si substrates. We have focalised on the case of large pyramidal islands presenting (113) facets on the free (001)Si surface with various non uniform composition inside the islands. The deformation inside the islands and Raman spectroscopy are discussed.
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