Binding energy of magneto-biexcitons in semiconductor nano-rings

We report a simulation on the magneto-biexciton system of asymmetrical InAs/GaAs nano-rings, using a smooth three dimensional confinement potential which realistically describes electronic properties of the rings. In our calculation, we use the Hartree approximation to calculate the self-consistent energy for exciton and biexciton confined in the system. We simulate recombination energy, binding energy and their diamagnetic shifts and compare those results with experimental data obtained from the magneto-photoluminescence measurement. We found that using the realistic geometry and composition of the asymmetric nano-ring in our simulations we are able to reproduce experimental data with good accuracy.