| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1869803 | Physics Procedia | 2010 | 4 Pages |
Abstract
InMnAs grown by MOVPE is a room temperature ferromagnetic semiconductor with a Tc of 330 K. The origin of the ferromagnetism and the interactions between itinerant carriers and localized spins in these structures are open questions. To address these questions, the carrier and spin life time in these structures were probed in mid-infrared region. The approach in this work was focused on the time and polarization-resolved differential transmission measurements suggesting a T1 of ∼1 ps. We compare our results with reported spin relaxations in InAs and MBE grown InMnAs.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
