Doping Level Dependence of Transport Properties in InAsSb Quantum Wells

We investigated the transport properties of the Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells (QWs). Intentional doping of donors to the QW is effective to decrease the sheet resistance and suppress its temperature dependence because the carrier density is maintained to be relatively high in low temperature. Additionally, although there exists a low mobility region near the heterointerface of the QW and a high mobility region far from the interface in this system, the doped electrons contribute to keep high mobility in low temperature because the increase of electrons prevents the accumulation of all electrons in the low mobility region.