| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1869817 | Physics Procedia | 2010 | 6 Pages |
Abstract
We propose the notion of counting the number of activated spins to identify the weak localization properties of graphene under effects of inter-valley scattering, intrinsic and Rashba spin-orbit interactions (SOI). It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.
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