Spin-polarization in InAs/AlSb double barrier resonant tunneling structures: influence of barrier material and interface structure

We present a study on the atomistic simulation of the spin-polarized transmissions through InAs/AlSb double barrier resonant tunneling heterostructures. By making use of the atomistic sp3s* tight binding Hamiltonian including the intra-atomic spin-orbit interaction and the recursive Green’s function method, we obtain the significant anisotropic zero-magnetic-field spinsplitting of the resonant transmission peak in the absence of the external electric field, demonstrating the importance of the barrier material and the atomic scale detail of the hetero interfaces on the spin-splitting.