| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1869837 | Physics Procedia | 2010 | 6 Pages |
Abstract
The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studied by means of angle-resolved photoemission and compared with the results of ab initio pseudopotential calculations. For Ge1−xMnxTe surface alloy, changes in the valence band induced by presence of Mn atoms are revealed.
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