Micro-twin Defects in InSb/AlInSb layers grown on (001) GaAs ∼ Application of the -directional TEM analysis ∼

Methods for the reduction of micro-twin defects in InSb/AlInSb epilayers were investigated by using -directional TEM analysis. The use of a 2°off-axis GaAs (001) substrate which has been known as an effective way to reduce micro-twin densities was combined with another approach, the use of an As2 beam for oxide desorption from a GaAs substrate surface. The combined method yields a micro-twin density of 3.3×102/cm, which is 3.0 times smaller than for a similar previous method with an Sb2 flux. This study also demonstrates the usefulness of -directional TEM analysis for investigating micro-twin defects in (001) thin films.