Direct Laser Recording on Amorphous Silicon Film

Results of direct laser recording on amorphous silicon film by laser with wavelength λ= 532 nm and Blu Ray single mode laser diode with λ= 405 nm are presented. Measurements of a-silicon film transmission spectrum before and after exposure by focused laser beam demonstrates its changing. It proves the refractive index changing of recording layer under laser radiation interaction and transformation of amorphous silicon to crystalline silicon under laser radiation interaction. Measurement of recorded relief shows that under laser radiation interaction to a-silicon layer relief depth is about 30-100 nm. Microstructures with a size of 5–7 μm are recorded by 120mW single mode Blu Ray laser diode with λ= 405 nm. Use of Blu Ray laser diodes for recording on amorphous silicon film opens opportunities to design compact Laser Writing System for diffractive structures fabrication and interference lithography.