Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1870136 | Physics Procedia | 2013 | 9 Pages |
Abstract
Cobalt doped thin films of CdS [Cd1-xCoxS with x=0, 0.05, 0.1,0.15,0.2,0.25] have been prepared for different doping concentrations using chemical bath deposition technique (CBD). The characterization of the films was done by using XRD, AFM and Photoconductivity analysis. The lattice structure of CdS is found to be fcc which changes to hexagonal phase with the increase in Co concentration. Marked changes are seen in AFM images and shows that the grain size increases with the increases in Co concentration. This in-turn has a pronounced effect in the behaviour of photocurrents. Results will be discussed in the light of existing models of photosensitivity coupled with diluted magnetic semiconductors.
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