Effect of Laser Fluence on the Properties of Microstructured Silicon Solar Cells

The surface of silicon wafers was irradiated with ultrafast picosecond laser pulses in the presence of SF6 at a fluence of 0.3 J/cm2, 0.4 J/cm2 and 0.5 J/cm2, respectively. And three microstructured surfaces doped with sulfur were obtained and applied to solar cells. The effect of laser fluence on the properties of cells is investigated. The result shows that the parameters of cells irradiated with the fluence of 0.4 J/cm2 are the best. The FF, Pm, and Eff of cells irradiated with the fluence of 0.3 J/cm2 are superior to that of cells irradiated with the fluence of 0.5 J/cm2 although ISC and VOC are lower. The parasitic resistance is analyzed to explain the higher FF of the cells irradiated with the fluence of 0.3 J/cm2. And the surface morphology of microstructured silicon was characterized by SEM.