| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1871278 | Physics Procedia | 2015 | 4 Pages |
Abstract
The technique of thin film forming of NaThxFy compounds on the Si (111) surface by electron-beam evaporation was developed. It is shown that the band gap of pure thorium fluoride is 6.7 eV; of sodium fluoride – 9.5 eV, while in compounds of thorium-sodium fluoride NaTh1.3F6.2 it takes the value 7.1 eV. It was found that prolonged electron beam exposure leads to the recovery of thorium fluoride followed by oxidation of thorium atoms.
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