| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1871335 | Physics Procedia | 2015 | 5 Pages |
Abstract
The impact of diamond and graphene heat spreading layers on the thermal and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulations in the hydrodynamic model. It is shown that the introduction of heat spreader significantly reduced maximum device temperature, increased the device lifetime, and improved current-voltage characteristics. The conditions under which the heat spreader works most effectively were found.
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