Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1872085 | Physics Procedia | 2012 | 7 Pages |
Abstract
There is a considerable interest in type-II GaSb/InAs superlattice system due to several modern applications including infrared detectors. In these studies X-ray Photoelectron Spectroscopy (XPS) and Spectroscopic Ellipsometry (SE) have been used to extensive characterization of the surface and interface of GaSb/InAs superlattice. Application of XPS and SE techniques provide precise information from topmost layers of structure and allow excluding presence of GaAs-type interfaces in GaSb/InAs superlattices. Simultaneously, these results indicate that InSb-type or GaInSb-type interfaces have been detected in the structures studied.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
E. Papis-Polakowska, J. Kaniewski, J. Szade, W. Rzodkiewicz, A. Jasik, K. Reginski, A. Wawro,