Pentacene-Gate Dielectric Interface Modification with Silicon Nanoparticles for OTFTs

We report on the properties of pentacene layers and OTFTs (Organic Thin Film Transistors) deposited on semiconductor-gate insulator interfaces covered with silicon nanoparticles (SiNPs) monolayer prepared by the Langmuir-Blodgett method compared to a reference sample (without SiNPs) prepared in an otherwise identical way. To analyse the structural quality, micro-Raman spectroscopy was employed and the correspondence between thin and bulk phase of the integral intensities peaks ratio (α) at 1154 and 1158 cm-1 (α = Int1154 /Int1158) was evaluated. The AFM analysis of the pentacene layers reveals that the different surface treatment of SiO2 gate insulator (hydrophobic or hydrophilic) before SiNPs monolayer deposition has a distinct influence on the formation of different pentacene grain size and morphology. We demonstrate the higher time stability of pentacene OTFT and increasing of saturation current (∼ 2.5 ×) behavior after storage time if the semiconductor-gate insulator interface is modified using a SiNP monolayer.