Preliminary Investigation of High-K Materials –Tio2 Doped Ta2o5 Films by Remote Plasma Ald

(TiO2)x(Ta2O5)1-x (x is up to 0.45) films deposited by a remote plasma atomic layer deposition (ALD) are reported in this work. The growth rates of the ALD films measured by ellipsometer are in a range of 0.8 - 1.06 Å/cycle at a deposition temperature of 300°C, depending on Ti/(Ti+Ta) ratio. In order to evaluate the high-k materials of Ti-doped Ta2O5 films, EDX and AES were used for determining the composition of the films. The thickness and optical properties of the films were measured by a spectral ellipsometer and CV-measurement was applied for testing the electrical property of the film. Furthermore, the effects of thermal annealing and in-situ O2-oxidation on thickness, refractive index and electrical property of (TiO2)x(Ta2O5)1-x films are also discussed.