| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1872119 | Physics Procedia | 2012 | 4 Pages |
Abstract
The ion implantation process of Mn doped Si is examined with particular attention on the role of implantation temperature, implantation induced amorphisation and implantation damaged Si lattice recovery. It seems likely that Mn prefers to accumulate around the surface of Si nanometer scale crystals. Further work on reducing Mn segregation is proposed.
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Physical Sciences and Engineering
Physics and Astronomy
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