| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1872143 | Physics Procedia | 2012 | 5 Pages |
Abstract
It has been shown by means of EPR and NMR technique that at the Si-SiO2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130°C the dencity of point defects is less than at lower and higher temperature (1100°C and 1200°C) and the content of absorbed impurities (hydrogen, oxygen) diminishes.
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