| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1872280 | Physics Procedia | 2012 | 4 Pages |
Abstract
Growth of Mn silicide on the 2×2-Fe and 7×7-Si phases at 400 oC was studied with differential reflection, electron energy losses and Auger electron spectroscopies. Formation of semiconducting Mn silicide (MnSi1.74) was found, when Mn atoms were deposited on the 2×2-Fe phase. Bandgap of this film is narrower than that of MnSi1.74 grown on Si substrate by 0.08 eV.
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