Synthesis of Mg2Si precipitates in Mg-implanted silicon by pulsed ion-beam treatment

The surface morphology of silicon substrates and their optical properties have been investigated after ion implantation by three Mg+ fluencies (Φ = 6×1015 cm-2, 1×1016 cm-2 and 6×1016 cm-2) and pulsed ion-beam treatment (PIBT) with three energy densities (W = 0.5, 1.0 and 1.5 J/cm2). Magnesium ion implantation into Si(111) substrates at room temperature results in the formation of smooth amorphous silicon layer with thickness of about 0.15 Φm containing amorphous non-stoichiometric magnesium silicide. Subsequent nanosecond PIBT leads to crystallization silicon and synthesis Mg2Si precipitates. The optimum conditions of ion implantation and PIBT leading to silicon crystallization and Mg2Si conservation within the implanted layer are determined (Φ = 6Φ1016 cm-2 and W = 0.5-1.0 J/cm2).