| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1872285 | Physics Procedia | 2012 | 4 Pages |
Abstract
Mg germanide nanorods were successfully fabricated by interdiffusion of the Mg into Ge nanorods on Si substrates at 425 oC for 0.5 h. It was observed that the Mg2Ge nanorod structures were formed by an interdiffusion process between the deposited Mg atoms and the Ge nanorods. Moreover, Mg2Si nanorods were formed by additional interdiffusion between the Mg2Ge nanorods and the Si substrates at 425 oC for 4 h. The structural properties of the Mg2Ge and Mg2Si nanorods were characterized, and the growth evolution of the structural and morphological properties of the nanorods was discussed.
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