Formation of poly-Si layers on AZO/ substrates and anti-reflection coating with AZO films for solar cells

AZO (Al: 2 wt%) films were deposited at on fused silica substrates by the radio-frequency magnetron sputtering method under different sputtering pressures and at various sample positions in order to obtain the optimum sputtering condition for low-resistivity AZO films. It was found that the resistivity of AZO films decreased with decreasing the sputtering pressure, and it also showed a pronounced position dependence. The poly-Si formed by Al-induced crystallization method on the AZO film was found to be almost 〈100〉-oriented, differently from our prediction. The performance of the AZO film as an anti-reflection coating on was also evaluated at a wavelength of 600 nm.