| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1872444 | Physics Procedia | 2011 | 4 Pages |
Abstract
It has been reported that light emission from semiconducting is enhanced by long time annealing. The enhancement of emission may be adapted to reduction of Si vacancy in . However, less sufficient evidence of the reduction of Si vacancy during annealing has been reported. In this study, we deduced concentration of Si vacancy in each depth as a function of annealing time from analysis of Rutherford backscattering random spectra.
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