Investigation of thermal diffusivity of doped and undoped GaSb by the Photothermal Deflection Technique

In this paper we present a new method based on the photothermal deflection and applied to bulk semiconductors in order to determine the thermal diffusivity. The sample is placed in the air and heated with a modulated light beam generated by a Halogen Lampe instead of traditionally a laser beam power. The advantage of this method lies in its simplicity and great sensitivity to the thermal diffusivity variation of the sample. By studying samples of GaSb with different types of doping (doping with Te and with Zn) we notice a change in the thermal diffusivity function of doping.