| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1873469 | Physics Procedia | 2012 | 6 Pages |
Abstract
A problem of impurity scattering in a quantum well (QW) is considered. The general approach for calculation of scattering amplitude is formulated. It contains two contributions - potential (as well known formula of Born approximation) and resonant. The results of calculations are presented for Si/SiGe QW. Resonance contribution to the scattering cross section manifests itself as typical asymmetric Fano peaks.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
