| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1873630 | Physics Procedia | 2011 | 6 Pages |
Abstract
By using time-resolved optical second harmonic generation (TR-SHG) measurements, we studied carrier behaviors in poly(3-hexylthiophene) (P3HT) metal-insulator-semiconductor (MIS) diodes. TR-SHG measurements probed transients of electric fielddistribution in the P3HT active layer. Results showed that hole injection and removal processes were non-reversal, where the response times were different from each other and the relaxation time of the transient electric field strongly depended on the hole injection process.
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