Free-volume Study in GeS2-Ga2S3-CsCl Chalcohalide Glasses Using Positron Annihilation Technique

Positron annihilation lifetime spectroscopy combined with Doppler broadening of annihilation radiation was applied to study free-volume entities in Ge-Ga-S glasses having different amount of CsCl additives. It is shown that the structural changes caused by CsCl additives can be adequately described by positron trapping modes determined within two-state model. The results testify in a favor of rather unchanged nature of corresponding free-volume voids responsible for positron trapping in the studied glasses, when mainly concentration of these traps is a subject to most significant changes with composition.