| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1876297 | Applied Radiation and Isotopes | 2012 | 4 Pages |
An Au–Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p–n junction. The results show that the Schottky diode had a higher Isc and harder radiation tolerance but lower Voc than the p–n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries.
► The Schottky diode was used as the converter of the betavoltaic battery. ► The radiation damage of converter was accelerated by using alpha particles. ► The Schottky diode has higher radiation resistance than that of the p–n junction. ► The Schottky diode could still be a promising converter of the betavoltaic battery.
