Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1876724 | Results in Physics | 2015 | 4 Pages |
Abstract
Due to a strong inversion layer at the a-Si:H/c-Si interface, there are errors in the determination of the band offsets by usual capacitance-voltage (C-V) measurements. An improved C-V measurement was presented to correct the errors by a modification to the apparent diffusion potential Vint. In this paper, the improved C-V measurement is used to characterize the band offsets in a-Si:H/c-Si heterojunctions with a good precision. The modified apparent diffusion potential is determined from Vint and the minority carrier density at the c-Si interface deduced from the coplanar conductance measurements. The value of ÎEC = 0.17 ± 0.04 eV between a-Si:H and c-Si is found by the improved C-V measurement with a precise determination of the band offsets.
Related Topics
Physical Sciences and Engineering
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Authors
G.Z. Nie, C.L. Zhong, L.E. Luo, Y. Xu,