| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1880563 | Radiation Measurements | 2014 | 4 Pages |
•Photostimulated luminescence (PSL) behavior of BaFBr:Eu2+ is analyzed for ion irradiations.•PSL intensity as a function of fluence is described based on a trapping model.•It is shown that the decrease in the PSL intensity is due to the trapping of photostimulated electrons to irradiation defects.•It is shown that the trapping process is quantitatively different for the sample with different Eu2+ concentrations.•It is strongly suggested that the range of the photostimulated electrons is larger than 10 nm.
The photostimulated luminescence (PSL) properties of the phosphor BaFBr:Eu after ion beam irradiation was analyzed; in particular, the PSL intensity dependent on ion fluence. The PSL intensity increased linearly with the ion fluence up to 1012 ions/cm2, and subsequently decreased gradually. The ion fluence dependence was observed to be similar among samples containing different F centers or different Eu concentrations. The fluence dependence was quantitatively analyzed based on a trapping model, in which competition between the trapping processes to storage centers and radiation defects is assumed; the model explained the experimental data quantitatively. The results indicate that radiation defects influence the PSL properties via the trapping of photostimulated electrons.
