Dosimetric characteristics of a MOSFET dosimeter for clinical electron beams

The fundamental dosimetric characteristics of commercially available metal oxide semiconductor field effect transistor (MOSFET) detectors were studied for clinical electron beam irradiations. MOSFET showed excellent linearity against doses measured using an ion chamber in the dose range of 20–630 cGy. MOSFET reproducibility is better at high doses compared to low doses. The output factors measured with the MOSFET were within ±3% when compared with those measured with a parallel plate chamber. From 4 to 12 MeV, MOSFETs showed a large angular dependence in the tilt directions and less in the axial directions. MOSFETs do not show any dose-rate dependence between 100 and 600 MU/min. However, MOSFETs have shown under-response when the dose per pulse of the beam is decreased. No measurable effect in MOSFET response was observed in the temperature range of 23–40 °C. The energy dependence of a MOSFET dosimeter was within ±3.0% for 6–18 MeV electron beams and 5.5% for 4 MeV ones. This study shows that MOSFET detectors are suitable for dosimetry of electron beams in the energy range of 4–18 MeV.