| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 188764 | Electrochimica Acta | 2012 | 5 Pages |
CuO/CuWO4 p–n junction thin films were prepared by using electrodeposited Cu films with an acidic cupric lactate system (pH ≤ 5). The photoelectrochemical properties of CuO and CuWO4–CuO films were studied by photoresponse and current–potential characteristics under 1 sun illumination. The photocurrent of CuO films prepared by annealing Cu films electrodeposited at pH 5 is about 0.6 mA/cm2 at −0.6 V vs Ag/AgCl. Both p-type and n-type behaviors occurred on CuO–CuWO4 film in the potential range from 0.8 V to −0.6 V vs Ag/AgCl. The photoelectrochemical photocurrent switching (PEPS) effect was observed in the case of p-CuO/n-CuWO4 heterojunction and the photocurrent switching potential is +0.33 V vs Ag/AgCl.
Graphical abstractCuO/CuWO4 p–n junction thin films were prepared by using electrodeposited Cu films. The photoelectrochemical properties of CuO and CuWO4–CuO films were studied by photoresponse and current–potential characteristics under 1 sun illumination.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Uniform Cu films were obtained by facile electrodeposition. ► Cu films can transform into CuO films by annealing. ► CuWO4 layer was easily formed on CuO surface by spin coating and annealing process. ► CuO/CuWO4 p–n junction film can show both p-type and n-type behaviors.
