Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1888252 | Radiation Measurements | 2013 | 32 Pages |
Abstract
The fast phosphorescence following IRSL in both crystals is likely the result of tunnelling from band-tail states in the vicinity of the excited state of the IR-trap. The post-OSL phosphorescence decay is an order of magnitude slower, owing to the contribution from tunnelling of charge from a range of occupied band-tail states. The lack of dependence of the phosphorescence decay rate on the excitation energy (in the range of 1.7-2.8Â eV), unambiguously indicates that a single mechanism causes the post-OSL phosphorescence signal.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Radiation
Authors
Romée H. Kars, Nigel R.J. Poolton, Mayank Jain, Christina Ankjærgaard, Pieter Dorenbos, Jakob Wallinga,