Article ID Journal Published Year Pages File Type
1888252 Radiation Measurements 2013 32 Pages PDF
Abstract
The fast phosphorescence following IRSL in both crystals is likely the result of tunnelling from band-tail states in the vicinity of the excited state of the IR-trap. The post-OSL phosphorescence decay is an order of magnitude slower, owing to the contribution from tunnelling of charge from a range of occupied band-tail states. The lack of dependence of the phosphorescence decay rate on the excitation energy (in the range of 1.7-2.8 eV), unambiguously indicates that a single mechanism causes the post-OSL phosphorescence signal.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Radiation
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