| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1888307 | Radiation Measurements | 2013 | 6 Pages |
Abstract
•Growth of (Lu,Y)2SiO5:Ce films by LPE method from PbO based flux onto YSO substrates.•Peculiarities of the luminescent properties of (Lu,Y)2SiO5:Ce films and crystals.•Strong influence of lead related centers on the light yield of (Lu,Y)2SiO5:Ce films scintillators.
The paper is dedicated to development of scintillators based on the single crystalline films of Ce3+ doped Lu2SiO5 (LSO:Ce) and Y2SiO5 (YSO:Ce) orthosilicates grown by Liquid Phase Epitaxy method onto YSO substrates from melt-solutions based on the PbO–B2O3 flux. We also compare the luminescent and scintillation properties of Ce doped LSO:Ce and YSO:Ce single crystalline films with those of their single crystal counterparts, grown by the Czochralski method.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Radiation
Authors
Yu. Zorenko, V. Gorbenko, V. Savchyn, T. Zorenko, B. Grinyov, O. Sidletskiy, A. Fedorov, J.A. Mares, M. Nikl, M. Kucera,