Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1899662 | Reports on Mathematical Physics | 2012 | 9 Pages |
Abstract
We study the noise-induced effects on the electron transport dynamics in low-doped n-type GaAs samples by using a Monte Carlo approach. The system is driven by an external periodic electric field in the presence of a random telegraph noise source. The modifications caused by the addition of external fluctuations are investigated by studying the spectral density of the electron velocity fluctuations for different values of the noise parameters. The findings indicate that the diffusion noise in low-doped semiconductors can be reduced by the addition of a fluctuating component to the driving electric field, but the effect critically depends on the features of the external noise source.
Related Topics
Physical Sciences and Engineering
Mathematics
Mathematical Physics
Authors
Dominique Persano Adorno, Nicola Pizzolato, Davide Valenti, Bernardo Spagnolo,