Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
192560 | Electrochimica Acta | 2009 | 4 Pages |
Abstract
Electrochemical deposition of ruthenium on n-type silicon from an ionic liquid is reported for the first time. The study was performed by dissolving ruthenium(III) chloride in a 1-butyl-3-methyl imidazolium hexafluorophosphate (BMIPF6) room-temperature ionic liquid (RTIL). Cyclic voltammetry (CV) studies demonstrate reduction and stripping peaks at −2.1 and 0.2 V vs. Pt quasi-reference, corresponding to the deposition and dissolution of ruthenium, respectively. Metallic Ru films of ∼100 nm thickness have been deposited and were analyzed using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS).
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Ofer Raz, Gil Cohn, Werner Freyland, Olivier Mann, Yair Ein-Eli,