| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 193059 | Electrochimica Acta | 2009 | 6 Pages |
Abstract
It is known that the electrochemistry of silicon in alkaline solution is closely linked to the anisotropic etching of the semiconductor. In this work the influence of two commonly used additives, hydrogen peroxide and isopropyl alcohol, on the surface chemistry of silicon in KOH solution was investigated by electrochemical methods. The results allow us to draw conclusions regarding the role of the additives in the chemical and electrochemical reactions.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Harold G.G. Philipsen, John J. Kelly,