Hybrid nanostructure of polypyrrole and porous silicon prepared by galvanostatic technique

Nanostructured porous silicon (PS) layer is prepared in a lightly doped p-type substrate (with pores < 5 nm) and used as a working electrode to deposit conducting polypyrrole (PPy) by the electrochemical oxidative polymerization technique in an organic liquid phase. Three distinguishable stages of PPy deposition are observed and recorded under constant applied current: nucleation of polymer at the pore bottom, unidirectional growth of PPy inside the pores, and polymerization outside the PS surface. The hybrid nanostrucutre of PS/PPy shows a significant improvement of electrical conductivity as opposed to the unmodified PS layer. The improved conductivity is observed in spite of the formation of insulating layer of silicon oxides as detected by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) measurements. Systematic study of fabrication and characterization of this organic–inorganic heterosystem, quantification of the PPy in the PS matrix, and the mechanism of filling the nanopores with polymer are presented and thoroughly discussed.