| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 196019 | Electrochimica Acta | 2006 | 5 Pages |
The influence of dissolved oxygen on titanium oxide film growth at various sweep rates was explored for both pure titanium and a titanium alloy. The results showed that the dissolved oxygen becomes only significant when the sweep rate is sufficiently low, but which can be neglected in the case of enough high sweep rates. It reasonably assumes that there is no adequate time for oxygen to move to the anodic surface when the sweep rate is sufficiently high so that the role of oxygen becomes insignificant. However, the situation was found to be different when the anodic oxide film was growing at a sufficiently low sweep rate dynamically. This is because the reduction of dissolved oxygen in the solution occurs and produces an additional current, which opposes the oxide growth current produced by adsorption and subsequent charge reaction.
