Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
196748 | Electrochimica Acta | 2005 | 6 Pages |
Abstract
The effect of bis-(3-sulfopropyl)-disulfide (SPS) in Cu electroless deposition was investigated. Quartz crystal microbalance (QCM) was used to measure the current density in a complete electroless bath, and the accelerating and suppressing effect of SPS were confirmed according to its concentration. The highest acceleration effect appeared at 0.5 mg l−1 of SPS with 4.24 mA cm−2 of current density while the current density decreased to 0.485 mA cm−2 at 5.0 mg l−1 of SPS. From differences in the effect of SPS according to the concentration, Cu bottom-up filling was achieved using electroless deposition. The adsorbed sulfur compounds on the surface produced CuS, which acted as an impurity to cause an increase of the film resistivity.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Chang Hwa Lee, Sang Chul Lee, Jae Jeong Kim,